The team made the following breakthroughs between 1998 and 2004. The fins are formed in a highly anisotropic etch process. A fin fieldeffect transistor finfet is a multigate device, a mosfet metaloxidesemiconductor fieldeffect transistor built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel, forming a double gate structure. This cited by count includes citations to the following articles in scholar. He has received the us national medal of technology and innovation from president barack obama and uc bekeleys distinguished teaching award. Its an evolutionary step from finfets and shares many of the same process steps and tools. Figure 1 depicts the geometry of finfet being simulated. Finfet becomes attractive due to its quasiplanar structure, better immunity to sces, range of channel lengths, cmos compatibility, good area ef. Nanoscale cmos spacer finfet for the terabit era ieee. Modern semiconductor devices for integrated circuits chenming calvin hu student solution manual rapi download. History of finfet finfet is a transistor design first developed by chenming hu and his colleagues at the university of california at berkeley, which tries to overcome the worst types of sceshort channel effect. Since there is no stop layer on a bulk wafer as it is in soi, the etch process has to be time based. Therefore, presenters will not be addressing first quarter information during this years program. Finfet scaling to 10nm gate length bin yu, leland chang, shibly ahmed, haihong wang, scott bell, chihyuh yang, cyrus tabery, chau ho, qi xiang, tsujae king, jeffrey bokor, chenming hu, ming.
Professor emeritus, professor in the graduate school. Bulksi mosfet source drain source gate gate source drain source finfet w eff 2 h fin n fins n gatefingers fin pitch p fin is a new key parameter to be optimized for performance and layout efficiency. Finfet what it is and does for ic products, history and future scaling by narlndl. The finfet architecture has helped extend moores law, with designs currently stretching to the 10 nm technology node. Chenming group is the first to have finance companies and financial leasing companies in paper industry, the only listed company to have a, b and h shares in china, and is rated as one of the 50 most cpmpetetive blue chip company in china. Chenming paper chinese painting handmade paper chen ming hsien enjoy modern painting modern painting by the chinese society for the study of modern chinese painting director. Apr 18, 2015 finfet is a transistor design first developed by chenming hu and his colleagues at the university of california at berkeley, which tries to overcome the worst types of sceshort channel effect. Technology and manufacturing day intel technology and manufacturing day 2017 occurs during intels quiet period, before intel announces its 2017 first quarter financial and operating results.
Thats partly what i meant about using threedimensional devices referring to his comments during a panel discussion on getting. He is a professor with the graduate school of uc berkeley and a board director of sandisk corp. His early research at berkeley included hybrid cars, like the gas. Internal view of a soi finfet showing the fin and b poly gate wrapping around the fin this work focuses on the implementation of a complete process flow of 22nm triple gate soi finfet into a commercially available numerical 3d process and device simulation environment. Tsu jae king, chunghsun lin, mohan dunga, angada sachid, sriram v. Simulationbased study of supersteep retrograde doped bulk.
Ensure your research is discoverable on semantic scholar. The altered mass is called e ective mass, mn and mp 4. Finfet and other new transistor technologies chenming hu univ. Thin fin and gate can be made with the same lithography and etching tools. For now, gateallaround technology appears to be the most practical technology after finfets. We survey different types of finfets, various possible finfet asymmetries and their impact, and novel logiclevel and architecturelevel tradeoffs offered by finfets. Niknejad, chenming hu, chargebased core and the model architecture of bsim5, proceedings of the sixth international symposium on quality of electronic design isqed05, pp. He was formerly chief technology officer of tsmc and is best known for contributions to ic reliability, bsim spice models, and the finfet transistor. Either we have a crash program to work it a materials solution out or we substitute novel device structures such as finfets. Abstract finfet devices are comprehensively investigated owing to the projection for application in the cmos integrated circuits fabrication. Chenming hu engineering and technology history wiki. Soi finfet with thick oxide on top of fin are called doublegate and those. Alternatively, in the singlegatemode, one gate is biased with the input signal while the other gate is.
Chenming calvin hu s seminal work on mos reliability and device modeling has had enormous impact on the continued scaling of electronic devices, enabling smaller yet more functional and higherperformance integrated circuits. Finfet general mosfet at submicron level is suffering from several submicron issues like short channel effects, threshold voltage variation etc. Simulationbased study of supersteep retrograde doped bulk finfet technology and 6tsram yield by xi zhang research project submitted to the department of electrical engineering and computer sciences, university of california at berkeley, in partial satisfaction of the requirements for the degree of master of science, plan ii. Chenming hu is the tsmc distinguished chair professor of electrical engineering and computer sciences at uc berkeley. Basis for a finfet is a lightly pdoped substrate with a hard mask on top e. By 2015 all top servers, computers, android and ios phones use finfet. Intel is the first company to use finfet in 2011 production calling it the most radical shift in semiconductor technology in over 50 years. Finfet a selfaligned doublegate mosfet scalable to 20 nm. Finfet a selfaligned doublegate mosfet scalable to.
Feb 15, 2018 finfet, also known as fin field effect transistor, is a type of nonplanar or 3d transistor used in the design of modern processors. Jin he, jane xi, mansun chan, hui wan, mohan dunga, babak heydari, ali m. Finfet modeling for ic simulation and design using the bsimcmg standard april 2018 yogesh singh chauhan d. He was the founding chairman of celestry design technologies, an ic design software company that was acquired by. National institute of advanced industrial science and technology multigate finfets s g d 1st finfet patent in 1980 from aist finfet proposed by aist in 1980 named finfet by ucb in 1999. Pdf a simplified fabrication process for sub20 nm cmos doublegate finfets is reported. The industry is converging on 7nm finfet as the next longlived node. Chenming hu, tsujae kingliu and jeffrey bokor at the university of california, berkeley who were the first to coin the term as a result of the shape of the structure.
Mosfet structure and its particular type named as finfet technology and its. Bora nikoli zheng guo, sriram balasubramanian, andrew carlson, radu zlatanovici 2 outline background motivation finfet based sram cell designs. Finfet based design for robust nanoscale sram prof. Finfet 3d transistor photo archive paintings by chenming hu paintings by raymond hu. With customers taping out now and getting ready for volume production on finfet processes from leading foundries, its not a risky choice to use one of the many finfet process for your next design. Sep 03, 2011 finfetwhat it is and does for ic products, history and future scaling 20110805. Pdf finfet modeling for ic simulation and design using. This book is the first to explain finfet modeling for ic simulation and the industry.
Pdf modern semiconductor devices for integrated circuits. Chenming hu, the 2020 ieee medal of honor recipient nhl season could resume with fourarena plan, commissioner bettman says saskatchewan to outline plan for gradual restart to economy beginning next month. Finfet layout layout is similar to that of conventional planar mosfet, except that the channel width is quantized. Finfet is a promising device structure for scaled cmos logicmemory applications in 22nm technology and beyond, thanks to its good short channel effect sce controllability and its small variability. Jae king liu department of electrical engineering and computer sciences university of california, berkeley, ca 94720. Chenming group, chenming paper shandong chenming paper. The ones marked may be different from the article in the profile. Finfet technology takes its name from the fact that the fet structure used looks like a set of fins when viewed. As in earlier, planar designs, it is built on an soi silicon on insulator substrate. Using the bsimcmg standard chauhan, yogesh singh, lu, darsen duane, sriramkumar, vanugopalan, khandelwal, sourabh, duarte, juan pablo, payvadosi, navid, niknejad, ai, hu, chenming on. Some of the key process challenges in creating finfet structures. From 2d simulation of dg finfet, it is found that the gatelength. Design and implementation author jamil kawa synopsys fellow introduction four years following the introduction of the first generation finfets, the 22nm trigate, and roughly one year after the first production shipments of 1416nm finfets, 10nm finfet designs are taping out and are slated for production in 2016. Lu sriramkumar venugopalan sourabh khandelwal chenming hu.
Chenming has been awarded successively over 200 honorary titles at the provincial level or above. Intel will use 3d finfet at 22nm most radical change in 4 decades there is a competing soi technology chenming hu, march 20 2. The origins of intels new transistor, and its future. Originally, finfet was developed for use on silicononinsulatorsoi. While that is an amazing achievement, the industry is already working on ways to continue transistor scaling. Physics and modeling of finfet and utbsoi mosfets using bsimmg as example. Finfet is a beginning chenming hu university of california berkeley. Chenming hu, august 2011 11 finfet leakage path s d. Another important consideration is whether the technology is provenhave others already made the switch and how reliable is the technology. Finfet interview of chenming hu at uc berkeley on finfet, innovation, and the semiconductor industry in 2015 when all top android. In a 22 nm process the width of the fins might be 10. Construction of a finfet fundamentals semiconductor. That is a limitation of finfet, and this is called width quantization.
What may happen finfet will be used at 22nm by intel and later by more firms through and beyond 10nm. The band model is the tool required for quantitative analysis of semiconductors. Cmosbased electronics will remain vital for a century or more, according to dr chenming hu, widely regarded as the father of the finfet transistor architecture to which the semiconductor industry is currently transitioning. Solutionmanualformodernsemiconductordevicesforintegratedcircuits chenming c. Chenming hu joined the faculty of the university of california, berkeley, in 1976 top. Jul 11, 2016 finfet is a transistor design first developed by chenming hu and his colleagues at the university of california at berkeley, which tries to overcome the worst types of sceshort channel effect. He is tsmc distinguished professor emeritus in the electronic engineering and computer science department of the university of california, berkeley, in the united states. Chenming hu, tsmc distinguished professor at uc berkeley. All content in this area was uploaded by chenming hu on may. Charles kuo, erik anderson, tsujae king, jeffrey bokor, fellow, ieee, and chenming hu, fellow, ieee. Sep 16, 2016 globalfoundries announces new 7nm finfet process, full node shrink. In 2009, the institute of electrical and electronics engineers.
Quantummechanical confinement and double junctions in finfets. Finfet is proposed to overcome the short channel effects. Modern semiconductor devices for ics free download as powerpoint presentation. In this article, key elements that differentiate junctionisolated bulk and dielectricisolated soi finfet transistors are discussed, encompassing aspects of process integration, device design, reliability, and product performance. This book is the first to explain finfet modeling for ic simulation and the industry standard bsimcmg describing the rush in demand for advancing the technology from planar to 3d architecture, as now enabled by the approved industry standard. Based on this, finfets with one atomic layer fin are obtained, with onoff ratios reaching. He has received the us national medal of technology and. Modern semiconductor devices for integrated circuits. He and his team published seminal papers on finfets 1999 and utbsoi 2000.
Semantic scholar profile for chenming hu, with 124 highly influential citations and 86 scientific research papers. Cmos good for another century, says father of finfet. Finfet architecture analysis and fabrication mechanism. Figure 1 structure of finfet 2 3 silicon on insulator soi process is used to fabricate finfet.
Electrons and holes are the major characters in the play and carry opposite charge. Integrated circuit scaling to 10 nm and beyond mark bohr, intel senior fellow. A fin fieldeffect transistor finfet is a multigate device, a mosfet built on a substrate where. Finfeta selfaligned doublegate mosfet scalable to 20 nm digh hisamoto, member, ieee, wenchin lee, jakub kedzierski, hideki takeuchi, kazuya asano, member, ieee, charles kuo, erik anderson, tsujae king, jeffrey bokor, fellow, ieee, and chenming hu, fellow, ieee abstract mosfets with gate length down to 17 nm are reported. Is finfet process the right choice for your next soc.
The group was led by hisamoto along with tsmcs chenming hu. Their mass however is altered from the mass of an electron in vacuum. Interview of chenming hu at uc berkeley on finfet, innovation, and the semiconductor industry in 2015 when all top android and ios cell phones started using finfet processors. From 2001 to 2004, he was the chief technology officer of tsmc. One of the many interesting topics in the new 3d finfet technology is the approach to isolation. Obama presents national medal to chenming hu president obama presents the national medal of technology and innovation to chenming hu on may 19, 2016. Chenming hu books list of books by author chenming hu. Now you can create the design by using the finfet symbols by pressing i in schematic. Jun 10, 2016 interview of chenming hu at uc berkeley on finfet, innovation, and the semiconductor industry in 2015 when all top android and ios cell phones started using finfet processors. From this model one can get the energy gap, ek diagrams allowing the determination of e ective masses. Finfet modeling for ic simulation and design elsevier scitech connect. Finfet what it is and does for ic products, history and future scaling 20110805. A lateral gateallaround technology is basically a finfet on its side with a gate wrapped around it. Fabrication and characterization of bulk finfets for future.
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